BU806 Datasheet

BU806 Silicon NPN Darlington Power Transistor

·High Voltage: VCEV= 400V(Min) ·Low Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 5A APPLICATIONS ·Designed for use in horizontal deflection circuits in TV’s and CRT’s. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEV Collector-Emitter Vo.

Features

806 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 50mA VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB=B 50mA ICES Collector Cutoff Current VCE= RatedVCBO; VBE= 0 ICEV Collector Cutoff Current IEBO Emitter Cutoff Current VCE= RatedVCEV; VBE(off)= 6V VEB= 6V; IC= 0 VECF C-E Diode Forward Voltage IF= 4A Switching Times ton Turn-On Time ts Storage Time tf Fall Time IC= 5A; IB1= 50mA;IB2= -0.5A VCC= 100V MIN TYP.