NCEP01T13D Datasheet

NCEP01T13D N-Channel Super Trench Power MOSFET

The NCEP01T13D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching.

Features

● VDS =100V,ID =135A RDS(ON) <4.5mΩ @ VGS=10V
● Excellent gate charge x RDS(on) product
● Very low on-resistance RDS(on)
● 175 °C operating temperature
● Pb-free lead plating
● 100% UIS tested Application
● DC/DC Converter
● Ideal for high-frequency switching and synchronous rectification Schematic diagram Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-263-2L top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width NCEP01T13D NCEP01T13D TO-263-2L - - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Par.