AOD7S60 Datasheet

AOD7S60 Power Transistor

Product Summary The AOD7S60 & AOU7S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts ca.

Features

rate above 25oC PD MOSFET dv/dt ruggedness Peak diode recovery dv/dt dv/dt Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds K Thermal Characteristics TL Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Maximum Junction-to-CaseD,F Symbol RθJA RθCS RθJC Maximum 600 ±30 7 5 33 1.7 43 86 83 0.7 100 20 -55 to 150 300 Typical 45 -1.2 Maximum 55 0.5 1.5 D S Units V V A A mJ mJ W W/ oC V/ns °C °C Units °C/W °C/W °C/W Rev0: Aug 2011 www.aosmd.com Page 1 of 7 AOD7S60/AOU7S60 Electrical Character.