L2SC2412KSMT1G General Purpose Transistor

L2SC2412KSMT1G General Purpose Transistor

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFO.

Features

eries S-L2SC2412KQMT1G Series SC-74 654 CBE EBC 123 L2SC2412KQMT1G =BQ L2SC2412KRMT1G =BR L2SC2412KSMT1G =G1F ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Collector
  –Emitter Breakdown Voltage (IC = 1 mA) Emitter
  –Base Breakdown Voltage (IE = 50 µA) Collector
  –Base Breakdown Voltage (IC = 50 µA) Collector Cutoff Current (VCB = 60 V) Emitter cutoff current (VEB = 7 V) Collector-emitter saturation voltage (IC/ IB = 50 mA / 5m A) DC current transfer ratio (V CE = 6 V, I C= 1mA) Transition frequency (V CE = 12 V, I E=
  – 2mA, f =30MHz ) Output capacitance (V CB = 12 .