V20WL45-M3 Trench MOS Barrier Schottky Rectifier

V20WL45-M3 Trench MOS Barrier Schottky Rectifier

www.vishay.com V20WL45-M3 Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.30 V at IF = 5 A TMBS® TO-252 (D-PAK) K NC A V20WL45 NC K A HEATSINK FEATURES • Trench MOS Schottky technology • Ideal for automated placement • Low forward voltage drop, low power losse.

Features

• Trench MOS Schottky technology
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) 20 A VRRM 45 V IFSM VF at IF = 20 A (TA = 125 °C) 180 A 0.48 V TJ max. Package 150 °C TO-252 (D-PAK) Diode v.