V12W60C-M3 |
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| Part Number | V12W60C-M3 |
| Manufacturer | Vishay (https://www.vishay.com/) |
| Description | www.vishay.com V12W60C-M3 Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 3 A TMBS® TO-252 (D-PAK) K A A V12W60C AK A HEATSINK FEATURES • Tren... |
| Features |
• Trench MOS Schottky technology • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 6 A (TA = 125 °C) TJ max. Package 2x6A 60 V 90 A 0.47 V 150 °C TO-252 (D-PAK) Diode variation... |
| Datasheet |
 V12W60C-M3 Data Sheet
PDF 118.92KB |
| Distributor | Stock | Price | Buy |
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