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RoHS BC847S Multi-Chip TRANSISTOR (NPN) SOT-363 FEATURES Power dissipation DPCM : 300 mW (Tamb=25℃) TCollector current .,LICM : 200 mA Collector-base voltage V(BR)CBO : 50 V Operating and storage junction temperature range OTJ,Tstg: -55℃to +150℃ CMARKING: 1C ELECTRICAL CHARACTERISTICS (T.
Power dissipation DPCM : 300 mW (Tamb=25℃) TCollector current .,LICM : 200 mA Collector-base voltage V(BR)CBO : 50 V Operating and storage junction temperature range OTJ,Tstg: -55℃to +150℃ CMARKING: 1C ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) ICParameter NCollector-base breakdown voltage Collector-emitter breakdown voltage OEmitter-base breakdown voltage RCollector cut-off current TDC current gain CCollector-emitter saturation voltage LEBase-emitter voltage ETransition frequency WEJCollector output capacitance Symbol Test conditions V(BR)CBO Ic=10µA,IE=0 V(BR.
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
|---|---|---|---|---|
| 1 | BC847 |
LITE-ON |
NPN General Purpose Transistor |
|
| 2 | BC847 |
STMicroelectronics |
SMALL SIGNAL NPN TRANSISTORS |
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| 3 | BC847 |
Fairchild Semiconductor |
NPN EPITAXIAL SILICON TRANSISTOR |
|
| 4 | BC847 |
AUK corp |
NPN Silicon Transistor |
|
| 5 | BC847 |
GME |
NPN Transistor |
|
| 6 | BC847 |
Multicomp |
NPN General Purpose Transistor |
|
| 7 | BC847 |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR |
|
| 8 | BC847 |
INCHANGE |
NPN Transistor |
|
| 9 | BC847 |
UTC |
NPN SILICON TRANSISTOR |
|
| 10 | BC847 |
Pan Jit International |
NPN GENERAL PURPOSE TRANSISTORS |
|
| 11 | BC847 |
ON Semiconductor |
General Purpose Transistors |
|
| 12 | BC847 |
RECTRON |
NPN Silicon Planar Epitaxial Transistors |
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| 13 | BC847 |
Central Semiconductor |
NPN SILICON TRANSISTOR |
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| 14 | BC847 |
SeCoS |
General Purpose Transistor |
|
| 15 | BC847 |
TAITRON |
SMD General Purpose Transistor |
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