TriQuint’s TGA2576-2-FL is a wideband power amplifier fabricated on TriQuint’s proven 0.25um GaN on SiC production technology. Operating from 2.5 to 6 GHz, the TGA2576-2-FL achieves 40W of saturated output power, greater than 36% power-added efficiency and 29dB small signal gain. For ideal thermal m.
Frequency Range: 2.5 to 6 GHz
PSAT: 46.5 dBm @ PIN = 26dBm, CW
PAE: 36%
Small Signal Gain: 29 dB
Bias: VD = 30 V, IDQ = 1.55 A, VG = −2.5 V Typical
Dimensions: 11.4 x 17.3 x 3.0 mm.
Functional Block Diagram
General Description
TriQuint’s TGA2576-2-FL is a wideband power amplifier fabricated on TriQuint’s proven 0.25um GaN on SiC production technology. Operating from 2.5 to 6 GHz, the TGA2576-2-FL achieves 40W of saturated output power, greater than 36% power-added efficiency and 29dB small signal gain.
For ideal thermal management and handling, the TGA2576-2-FL is offered in a Cu.
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
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1 | TGA2576-FL |
TriQuint Semiconductor |
2.5 to 6 GHz GaN HEMT Power Amplifier | |
2 | TGA2576-FS |
TriQuint Semiconductor |
GaN Power Amplifier | |
3 | TGA2573 |
TriQuint Semiconductor |
2-18 GHz 10 Watt GaN Amplifier | |
4 | TGA2575 |
TriQuint Semiconductor |
Ka-Band 4 Watt Power Amplifier | |
5 | TGA2575-TS |
TriQuint Semiconductor |
Ka-Band 3 Watt Power Amplifier | |
6 | TGA2578 |
TriQuint Semiconductor |
30W Power Amplifier | |
7 | TGA2578 |
Qorvo |
2GHz - 6GHz 30W GaN Power Amplifier | |
8 | TGA2578-CP |
Qorvo |
Power Amplifier | |
9 | TGA2578-CP |
TriQuint Semiconductor |
30W GaN Power Amplifier | |
10 | TGA2579-2-FL |
TriQuint Semiconductor |
20W Ku-Band GaN Power Amplifier | |
11 | TGA2579-FL |
TriQuint Semiconductor |
25 Watt Ku-Band GaN Power Amplifier | |
12 | TGA2501 |
TriQuint Semiconductor |
Power Amplifier | |
13 | TGA2501-GSG |
TriQuint Semiconductor |
2.8 Watt 6-18 GHz Power Amplifier | |
14 | TGA2501-TS |
TriQuint Semiconductor |
6 - 18 GHz 2.8 Watt Power Amplifier | |
15 | TGA2502 |
TriQuint Semiconductor |
Power Amplifier |