Document | DataSheet (556.64KB) |
Bond Pad Configuration TriQuint’s TGA2575-TS is a wideband power amplifier fabricated on TriQuint’s production-released 0.15um pwr-pHEMT process. Operating from 32 GHz to 38 GHz, it achieves 35.5 dBm saturated output power, 22% PAE and 19 dB small signal gain over most of the band. The TGA2575-TS .
Frequency Range: 32.0
– 38.0 GHz
Power: 35.5 dBm Psat
PAE: 22%
Gain: 19 dB
Return Loss: 12 dB
Bias: Vd = 6 V, Id = 2.1 A, Vg = -0.60 V Typical
Dimensions: 5.31 x 8.92 x 0.49 mm
Functional Block Diagram
C5 100 pF
6 TGA2575-TS
C3 1000 pF
5
C1 1000 pF
14
C6 100 pF
C4 1000 pF
2
C2 1000 pF
3
General Description
Bond Pad Configuration
TriQuint’s TGA2575-TS is a wideband power amplifier fabricated on TriQuint’s production-released 0.15um pwr-pHEMT process. Operating from 32 GHz to 38 GHz, it achieves 35.5 dBm saturated output power, 22% PAE and 19 dB small signal gain over mo.
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
1 | TGA2575 |
TriQuint Semiconductor |
Ka-Band 4 Watt Power Amplifier | |
2 | TGA2573 |
TriQuint Semiconductor |
2-18 GHz 10 Watt GaN Amplifier | |
3 | TGA2576-2-FL |
TriQuint Semiconductor |
GaN Power Amplifier | |
4 | TGA2576-FL |
TriQuint Semiconductor |
2.5 to 6 GHz GaN HEMT Power Amplifier | |
5 | TGA2576-FS |
TriQuint Semiconductor |
GaN Power Amplifier |