PBSS9110D PNP transistor

PBSS9110D PNP transistor

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS8110D. 1.2 Features „ Low collector-emitter saturation voltage VCEsat „ High collector current capability IC and ICM „ High collector current gai.

Features

„ Low collector-emitter saturation voltage VCEsat „ High collector current capability IC and ICM „ High collector current gain (hFE) at high IC „ High efficiency due to less heat generation „ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications „ High-voltage DC-to-DC conversion „ High-voltage MOSFET gate driving „ High-voltage motor control „ High-voltage power switches (e.g. motors, fans) „ Automotive applications 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VCEO collector-emitter voltage IC collector current ICM p.