The μ PA2592T1H is N- and P-channel MOSFETs designed for DC/DC converters and power management applications of portable equipments. N- and P-channel MOSFETs are assembled in one package, to contribute minimize the equipments. PACKAGE DRAWING (Unit: mm) 2.9±0.1 0.65 8 5 A 0.17±0.05 0 to 0.025 2.
• 2.5 V drive available
• Low on-state resistance
N-channel RDS(on)1 = 50 mΩ MAX. (VGS = 4.5 V, ID = 2 A) RDS(on)2 = 65 mΩ MAX. (VGS = 2.5 V, ID = 2 A)
P-channel RDS(on)1 = 80 mΩ MAX. (VGS = −4.5 V, ID = −2 A) RDS(on)2 = 140 mΩ MAX. (VGS = −2.5 V, ID = −1 A)
• Built-in gate protection diode
• Small and surface mount package (8-pin VSOF (2429))
0.8±0.05
1 0.32±0.05
S
4 0.05 M S A
(0.3)
N-channel 1: Source 2: Gate 7, 8: Drain
P-channel 3: Source 4: Gate 5, 6: Drain
ORDERING INFORMATION
PART NUMBER μ PA2592T1H-T1-AT Note μ PA2592T1H-T2-AT Note
LEAD PLATING Pure Sn
PACKING 8 mm embossed t.
Distributor | Stock | Price | Buy |
---|
No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
1 | uPA2590 |
Renesas |
N- AND P-CHANNEL MOSFET | |
2 | UPA2502 |
NEC |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR | |
3 | UPA2503 |
NEC |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR | |
4 | UPA2510 |
NEC |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR | |
5 | UPA2520 |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
6 | UPA2521 |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
7 | uPA2550 |
Renesas |
DUAL P-CHANNEL MOSFET | |
8 | uPA2560 |
Renesas |
Dual N-CHANNEL MOSFET | |
9 | UPA2001C |
NEC |
NPN Silicon Epitaxial Darlington Transistor Array | |
10 | UPA2002C |
NEC |
NPN Silicon Epitaxial Darlington Transistor Array | |
11 | UPA2003C |
NEC |
NPN Silicon Epitaxial Darlington Transistor Array | |
12 | UPA2004C |
NEC |
NPN Silicon Epitaxial Darlington Transistor Array | |
13 | UPA2008 |
Unisonic Technologies |
3W STEREO CLASS-D AUDIO POWER AMPLIFIER | |
14 | UPA2200T1M |
Renesas |
N-CHANNEL MOS FET | |
15 | UPA2201T1M |
Renesas |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR |