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KTD1510 EPITAXIAL PLANAR NPN TRANSISTOR

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KTD1510 EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR TECHNICAL DATA HIGH POWER AMPLIFIER DARLINGTON TRANSISTOR. FEATURES Complementary to KTB2510. Recommended for 60W Audio Amplifier Output Stage. KTD1510 TRIPLE DIFFUSED NPN TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base .

Features

Complementary to KTB2510. Recommended for 60W Audio Amplifier Output Stage. KTD1510 TRIPLE DIFFUSED NPN TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector PowerDissipation (Tc=25 ) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING 160 150 5 10 1 100 150 -55 150 UNIT V V V A A W ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage ICBO IEBO V(BR.

KTD1510 KTD1510 KTD1510
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