This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Order cod.
Order code STU7LN80K5
VDS 800 V
RDS(on) max. 1.15 Ω
ID 5A
• Industry’s lowest RDS(on) x area
• Industry’s best figure of merit (FoM)
• Ultra-low gate charge
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Order code STU7LN80K5
Table 1: Device summary
Marking
.
Distributor | Stock | Price | Buy |
---|
No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
1 | STU70R1K3S |
STMicroelectronics |
N-Channel MOSFET | |
2 | STU75N3LLH6 |
STMicroelectronics |
N-channel MOSFET | |
3 | STU75N3LLH6-S |
STMicroelectronics |
N-channel MOSFET | |
4 | STU7N105K5 |
STMicroelectronics |
N-channel Power MOSFET | |
5 | STU7N60M2 |
STMicroelectronics |
N-channel Power MOSFET |