HRLD55N03K_HRLU55N03K HRLD55N03K / HRLU55N03K 30V N-Channel Trench MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 50nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 4.2 mΩ (Typ.) @VGS=10V L.
Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 50nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 4.2 mΩ (Typ.) @VGS=10V Lower RDS(ON) : 7.5 mΩ (Typ.) @VGS=4.5V 100% Avalanche Tested
December 2014
BVDSS = 30 V
RDS(on) typ = 4.2mΩ
ID = 100 A
D-PAK I-PAK
2
1 1
32 3
HRLD55N03K HRLU55N03K 1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS EAR
PD
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuou.
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No. | Part # | Manufacture | Description | Datasheet |
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1 | HRLD125N06K |
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2 | HRLD150N10K |
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8 | HRLF120N10H |
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9 | HRLF125N06K |
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10 | HRLF150N10K |
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11 | HRLF180N10K |
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12 | HRLF29N045H |
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13 | HRLF33N03K |
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14 | HRLF43N06H |
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15 | HRLF53N06H |
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