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10N120BND

Fairchild Semiconductor
Part Number 10N120BND
Manufacturer Fairchild Semiconductor
Title HGTG10N120BND
Description Data Sheet HGTG10N120BND December 2001 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hy...
Features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction ...
Published Sep 2, 2015
Datasheet PDF File 10N120BND PDF File


10N120BND
10N120BND


Features
of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT used is the development type TA49290. The Diode used is the development type TA49189. The I...



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