IRFU4615PBF Power MOSFETs

IRFU4615PBF Power MOSFETs

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G IRFR4615PbF IRFU4615PbF HEXFET® Power MOSFET D VDSS 150V RDS(on) typ. 34m: max. 42m: S ID 33A Benefits l Improved Gat.

Features

VGS dv/dt Gate-to-Source Voltage ePeak Diode Recovery TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Avalanche Characteristics EAS (Thermally limited) IAR EAR dSingle Pulse Avalanche Energy cAvalanche Current cRepetitive Avalanche Energy Thermal Resistance Symbol RθJC RθJA Parameter jJunction-to-Case iJunction-to-Ambient (PCB Mount) RθJA Junction-to-Ambient Notes  through ˆ are on page 11 Max. 33 24 140 144 0.96 ± 20 38 -55 to + 175 300 109 See Fig. 14, 15, 22a, 22b, Typ.
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  – Max. 1.045 50 110 Units .