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LBC847BDW1T1G
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LBC847BDW1T1G Dual-Channel Transistor

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LBC847BDW1T1G Dual-Channel Transistor

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. We declare that the material of product compliance with .

Features

847CDW1T1G LBC847CDW1T3G LBC848BDW1T1G LBC848BDW1T3G LBC848CDW1T1G LBC848CDW1T3G Marking 1B 1B 1F 1F 1G 1G 1K 1K 1L 1L Symbol PD R θJA T J , T stg Max Unit 380 mW 250 mW 3.0 328
  –55 to +150 mW/°C °C/W °C Shipping 3000 Units/Reel 10000 Units/Reel 3000 Units/Reel 10000 Units/Reel 3000 Units/Reel 10000 Units/Reel 3000 Units/Reel 10000 Units/Reel 3000 Units/Reel 10000 Units/Reel 1/6 LESHAN RADIO COMPANY, LTD. LBC846BDW1T1G, LBC847BDW1T1G, LBC847CDW1T1G, LBC848BDW1T1G, LBC848CDW1T1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol OFF CHARACTERISTICS .

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