Search by part number and manufacturer or description
File Size : 38.59KBLESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE ƽHigh current capacity in compact package. IC = 0.8A. ƽEpitaxial planar type. ƽPNP complement: L8550 ƽPb-Free Package is available. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping L8050PLT1 80P 3000/T.
-55 to +150
°C/W °C
L8050*LT1
3
1 2
SOT
–23
COLLECTOR 3
1 BASE
2 EMITTER
L8050*LT1
–1/3
LESHAN RADIO COMPANY, LTD.
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Typ
Collector-Emitter Breakdown Voltage (IC=1.0mA) Emitter-Base Breakdown Voltage (IE=100µΑ) Collector-Base Breakdown Voltage (IC=100µΑ) Collector Cutoff Current (VCB=35V) Emitter Cutoff Current (VEB=4V)
V(BR)CEO
V(BR)EBO
V(BR)CBO ICBO IEBO
25
5
40
–
–
–
–
–
–
–
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
ON .
Similar Product
| No. | Part # | Manufacture | Description | Datasheet |
|---|---|---|---|---|
| 1 | L8050QLT1 |
Leshan Radio Company |
General Purpose Transistors |
|
| 2 | L8050QLT1G |
Leshan Radio Company |
General Purpose Transistors |
|
| 3 | L8050QLT3G |
Leshan Radio Company |
General Purpose Transistors |
|
| 4 | L8050 |
LRC |
TO-92 Plastic-Encapsulate Transistors |
|
| 5 | L8050 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|