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L8550RLT1G |
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| Part Number | L8550RLT1G |
| Manufacturer | Leshan Radio Company |
| Description | LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications R... |
| Features |
rd (1) T A = 25 °C Derate above 25 °C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25 °C Derate above 25 °C Thermal Resistance, Junction to Ambient Junction and Storage Temperature
Symbol Max
Unit
PD
225 mW
1.8 mW /°C
R θJA
556 °C/W
PD
300 mW
2.4 mW /°C
R θJA
417 °C/W
T J , T stg -55 to +150 °C
1. FR –5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. L8550PLT1G Series S-L8550PLT1G Series 3 1 2 SOT – 23 COLLECTOR 3 1 BASE 2 EMITTER Rev.O 1/4 LESHAN RADIO COMPANY, LTD. L8550PLT1G Series S-L8550PLT1G S... |
| Document |
 L8550RLT1G Data Sheet
PDF 195.33KB |
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| No. | Part # | Manufacture | Description | Datasheet |
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Leshan Radio Company |
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Leshan Radio Company |
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Leshan Radio Company |
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Leshan Radio Company |
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Leshan Radio Company |
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Leshan Radio Company |
General Purpose Transistors |
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Leshan Radio Company |
General Purpose Transistors |
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