IRFIZ46NPBF |
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| Part Number | IRFIZ46NPBF |
| Manufacturer | International Rectifier |
| Description | Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switchi... |
| Features |
m Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor
VGS EAS IAR EAR dv/dt
Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
TJ TSTG
Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
Parameter
RθJC RθJA
www.irf.com
Junction-to-Case Junction-to-Ambient
PD - 9... |
| Document |
 IRFIZ46NPBF Data Sheet
PDF 217.30KB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
|---|---|---|---|---|
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International Rectifier |
Power MOSFET |
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Samsung |
Power MOSFET |
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Fairchild Semiconductor |
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International Rectifier |
HEXFET POWER MOSFET |
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INCHANGE |
N-Channel MOSFET |
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Vishay |
Power MOSFET |
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International Rectifier |
Power MOSFET |
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International Rectifier |
Power MOSFET |
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Infineon |
Power MOSFET |
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INCHANGE |
N-Channel MOSFET |
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