L9013SLT1G General Purpose Transistors

L9013SLT1G General Purpose Transistors

General Purpose Transistors LESHAN RADIO COMPANY, LTD. NPN Silicon FEATURE We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. L9013PL.

Features

TICS 500 mAdc Characteristic Total Device Dissipation FR-5 Board, (1) TA=25oC Derate above 25oC Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA=25 oC Derate above 25oC Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD R θ JA PD R θJA Tj ,Tstg Max 225 1.8 556 300 2.4 417 -55 to +150 Unit mW mW/oC oC/W mW mW/oC oC/W oC 1. FR
  –5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) Characteristic Symbol Min Typ OFF CHARACTERISTICS C.