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LMBT6428LT3G |
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| Part Number | LMBT6428LT3G |
| Manufacturer | Leshan Radio Company |
| Description | LESHAN RADIO COMPANY, LTD. Amplifier Transistors NPN Silicon z We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring ... |
| Features |
sipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature
DEVICE MARKING
Symbol PD
RθJA PD
RθJA TJ , Tstg
Max Unit
225 mW 1.8 mW/°C 556 °C/W
300 mW 2.4 mW/°C
417 –55 to +150 °C/W °C 2 EMITTER (S-)LMBT6428LT1G = 1KM, (S-)LMBT6429LT1G = M1L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector –Emitter Breakdown Voltage(3) V (BR)CEO Vdc (I C = 1.0 mAdc, I B = 0) LMBT6428LT1G 50 — (I C = 1.0 mAdc, I B = 0) LMBT6429LT1G 45 — Coll... |
| Document |
 LMBT6428LT3G Data Sheet
PDF 272.07KB |
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