L9014QLT1G Datasheet

L9014QLT1G General Purpose Transistors

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE ƽComplementary to L9014. ƽWe declare that the material of product compliance with RoHS requirements. ƽS- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified .

Features

aracteristic Symbol Max Unit Total Device Dissipation FR-5 Board, (1) TA=25oC Derate above 25oC PD 225 mW 1.8 mW/ oC Thermal Resistance, Junction to Ambient R©JA 556 o C/W Total Device Dissipation PD Alumina Substrate, (2) TA=25 oC 300 mW Derate above 25oC 2.4 mW/ oC Thermal Resistance, Junction to Ambient R©JA 417 oC /W Junction and Storage Temperature 1. FR
  –5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. TJ ,Tstg -55 to +150 o C 3 1 2 SOT
  – 23 COLLECTOR 3 1 BASE 2 EMITTER Rev.O 1/4 LESHAN RADIO COMPANY, LTD. L9014QLT1G Series S-L9014QLT1G S.