L9012RLT3G |
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Part Number | L9012RLT3G |
Manufacturer | Leshan Radio Company |
Description | General Purpose Transistors LESHAN RADIO COMPANY, LTD. PNP Silicon FEATURE We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications ... |
Features |
AL CHARATEERISTICS
-20 -40 -5 -500
V V V mAdc
Characteristic Total Device Dissipation FR-5 Board, (1) TA=25oC Derate above 25oC Thermal Resistance, Junction to Ambient
Total Device Dissipation Alumina Substrate, (2) TA=25 oC Derate above 25oC Thermal Resistance, Junction to Ambient Junction and Storage Temperature
Symbol PD
R θ JA PD
R θJA Tj ,Tstg
Max
225 1.8 556
300 2.4 417 -55 to +150
Unit
mW mW/oC oC/W
mW mW/oC oC/W
oC
1. FR –5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) Characteristic Symbo... |
Document |
L9012RLT3G Data Sheet
PDF 71.98KB |
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No. | Part # | Manufacture | Description | Datasheet |
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Leshan Radio Company |
General Purpose Transistors |
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Leshan Radio Company |
General Purpose Transistors |
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Leshan Radio Company |
General Purpose Transistors |
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Leshan Radio Company |
General Purpose Transistors |
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Leshan Radio Company |
General Purpose Transistors |
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Leshan Radio Company |
General Purpose Transistors |
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Leshan Radio Company |
General Purpose Transistors |
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Leshan Radio Company |
General Purpose Transistors |
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Leshan Radio Company |
General Purpose Transistors |
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Leshan Radio Company |
General Purpose Transistors |
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