LMBT5401LT1G High Voltage Transistor

LMBT5401LT1G High Voltage Transistor

LESHAN RADIO COMPANY, LTD. High Voltage Transistor FEATURE ƽ We declare that the material of product compliance with RoHS requirements. ƽ S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. DEVICE MARKING AND .

Features

556 °C/W 300 mW R θJA T J , Tstg 2.4 417
  –55to+150 mW/°C °C/W °C DEVICE MARKING LMBT5401LT1G=2L LMBT5401LT1G S-LMBT5401LT1G 3 1 2 SOT
  – 23 1 BASE 3 COLLECTOR 2 EMITTER ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Symbol OFF CHARACTERISTICS Collector
  –Emitter Breakdown Voltage (I C =
  –1.0 mAdc, I B = 0) Collector
  –Base Breakdown Voltage (I C =
  –100 µAdc, I E = 0) Emitter-BAse Breakdown Voltage (I E=
  –10µAdc,I C=0) Collector Cutoff Current (V CB =
  –120 Vdc, IE= 0) V (BR)CEO V (BR)CBO V(BR)EBO I CBO (V CB =
  –120 Vdc, IE= 0, T A=100 °C) 1. FR
  –5 = 1.0 .