L2SD1781KRLT3G Medium Power Transistor

L2SD1781KRLT3G Medium Power Transistor

LESHAN RADIO COMPANY, LTD. Medium Power Transistor (32V, 0.8A) L2SD1781KQLT1G L2SD1781KQLT1G Series S-L2SD1781KQLT1G Series FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G 4) We declare.

Features

1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G 4) We declare that the material of product compliance with RoHS requirements. 5) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 1 2 SOT-23 /TO-236AB FStructure Epitaxial planar type NPN silicon transistor FAbsolute maximum ratings (Ta = 25_C) COLLECTOR 3 1 BASE 2 EMITTER ORDERING INFORMATION Device L2SD1781KQLT1G S-L2SD1781KQLT1G L2SD1781KQLT3G S.