RJK6011DJA High Speed Power Switching MOS FET

RJK6011DJA High Speed Power Switching MOS FET

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa.

Features

• Low on-resistance RDS(on) = 35 Ω typ. (at ID = 0.05 A, VGS = 10 V, Ta = 25°C)
• Low drive current
• High density mounting Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92(1)) G 321 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation Channel to ambient thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% Symbol VDSS VGSS ID ID Note1 (pulse) IDR IDR Note1 (pulse) Pch.