JAN2N2432A NPN SILICON LOW POWER TRANSISTOR

JAN2N2432A NPN SILICON LOW POWER TRANSISTOR

TECHNICAL DATA NPN SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/313 Devices 2N2432 2N2432A Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Collector Voltage Collector Current Total Power Dissipation @ TA = +250C .

Features

V(BR)CEO Collector-Emitter Cutoff Current VCB = 25 Vdc VCB = 40 Vdc 2N2432 2N2432A ICES Min. 15 18 10 30 45 TO- 18* (TO-206AA) *See appendix A for package outline Max. Unit Vdc Vdc 10 ηAdc 10 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N2432, 2N2432A JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics OFF CHARACTERISTICS (con’t) Collector-Emitter Cutoff Current VCB = 30 Vdc 2N2432 VCB = 25 Vdc 2N2432 VCB = 40 Vdc 2N2432A VCB = 45 Vdc Emitter-Collector Cutoff Current 2N2432A VEC = 15 Vdc, VBC .