D628 Silicon NPN Darlington Power Transistor

D628 Silicon NPN Darlington Power Transistor

·Collector-Emitter Sustaining Voltage- : VCEO(sus)= 100V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 5A ·Low Collector Saturation Voltage- : VCE (sat)= 2.0V(Max.)@ IC= 5A ·Complement to Type 2SB638 APPLICATIONS ·Designed for low frequency power amplifier and high current switching applicatio.

Features

ise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 200mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 10mA V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 100mA VBE(sat)-1 Base-Emitter Saturation Voltage IC= 5A; IB= 10mA VBE(sat)-2 Base-Emitter Saturation Voltage IC= 10A; IB= 100mA ICBO Collector Cutoff Current VCB= 100V; IE= 0 ICEO Collector Cutoff Current hFE DC Current Gain VCE= 80V; RBE= ∞ IC= 5A, VCE= 3V Switching Times ton Turn-on Time t.