The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy puls.
* RDS(ON) < 0.45Ω @ VGS=10V, ID=10A * High switching speed
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
20N60L-T47-T
20N60G-T47-T
20N60L-T3P-T
20N60G-T3P-T
Pin Assignment: G: Gate D: Drain S: Source
Package
TO-247 TO-3P
Pin Assignment 123 GDS GDS
Packing
Tube Tube
MARKING
www.unisonic.com.tw Copyright © 2017 Unisonic Technologies Co., Ltd
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QW-R502-587.I
20N60
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC =25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage Gate-.
Distributor | Stock | Price | Buy |
---|
No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
1 | 20N60 |
ROUM |
20A 600V N-channel Enhancement Mode Power MOSFET | |
2 | 20N60 |
IXYS |
IGBT | |
3 | 20N60A |
IXYS |
IGBT | |
4 | 20N60A |
JieJie |
N-channel MOSFET | |
5 | 20N60A4D |
Fairchild Semiconductor |
HGTG20N60A4D | |
6 | 20N60A4D |
ON Semiconductor |
N-Channel IGBT | |
7 | 20N60B |
IXYS Corporation |
IGBT | |
8 | 20N60BD1 |
IXYS Corporation |
IGBT | |
9 | 20N60C2 |
Infineon Technologies |
Power Transistor | |
10 | 20N60C3 |
Intersil Corporation |
N-Channel IGBT | |
11 | 20N60C3 |
Infineon |
Power Transistor | |
12 | 20N60C5 |
IXYS |
Power MOSFET | |
13 | 20N60CFD |
Infineon |
Cool MOS Power Transistor | |
14 | 20N60D |
ROUM |
20A 600V N-channel Enhancement Mode Power MOSFET | |
15 | 20N60K-MK |
UTC |
N-CHANNEL MOSFET |