DSF01S30SC Silicon Epitaxial Schottky Barrier Type Diode

DSF01S30SC Silicon Epitaxial Schottky Barrier Type Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSF01S30SC DSF01S30SC High-Speed Switching Application Unit: mm 0.1 9±0.02 Abusolute Maximum Ratings (Ta = 25°C) ２ 0.025±0.015 0.62 ±0.03 0.3 8 Characteristic Symbol Rating Unit Reverse voltage Average forward current Surge current (.

Features

or Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). SC2 JEDEC ― JEITA ― TOSHIBA 1-1R1A Weight: 0.17 mg (typ.) Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Forward voltage Reverse current Reverse current Total capacitance Symbol VF(1) VF(2) IR(1) IR(2) CT Test Circuit Test Condition ― IF = 10 mA ― IF = 100 mA ― VR = 10 V ― VR = 30 V ― VR = 0, f = 1 MHz Min Typ. Max Unit ― 0.27 0.3 V ― 0.41 0.5 V ― ― 7 μA ― ― 50 μA ⎯ 9.3 ⎯ .