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SST29VE512 |
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| Part Number | SST29VE512 |
| Manufacturer | SST |
| Description | The SST29EE512/29LE512/29VE512 are 64K x8 CMOS, Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunnelin... |
| Features |
• Single Voltage Read and Write Operations – 5.0V-only for SST29EE512 – 3.0-3.6V for SST29LE512 – 2.7-3.6V for SST29VE512 • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • Low Power Consumption – Active Current: 20 mA (typical) for 5V and 10 mA (typical) for 3.0/2.7V – Standby Current: 10 µA (typical) • Fast Page-Write Operation – 128 Bytes per Page, 512 Pages – Page-Write Cycle: 5 ms (typical) – Complete Memory Rewrite: 2.5 sec (typical) – Effective Byte-Write Cycle Time: 39 µs (typical) Data Sheet • Fast Read Access Time – 5.0V-only oper... |
| Document |
 SST29VE512 Data Sheet
PDF 265.94KB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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SST |
1 Mbit (128K x8) Page-Mode EEPROM |
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Silicon Storage |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash |
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Silicon Storage |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash |
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Silicon Storage |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash |
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Silicon Storage |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash |
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Rohm |
PNP Medium Power Transistor |
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SST |
1 Mbit (128K x8) Page-Mode EEPROM |
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SST |
512 Kilobit (64K x8) Page-Mode EEPROM |
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SST |
1 Mbit (128K x8) Page-Mode EEPROM |
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SST |
512 Kilobit (64K x8) Page-Mode EEPROM |
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