STFW60N65M5 N-CHANNEL MOSFET

STFW60N65M5 N-CHANNEL MOSFET

duThe devices are N-channel MDmesh™ V Power roMOSFET based on an innovative proprietary Pvertical process technology, which is combined tewith STMicroelectronics’ well-known lePowerMESH™ horizontal layout structure. The resulting product has extremely low on- soresistance, which is unmatched among s.

Features

Order codes STFW60N65M5 t(s)STW60N65M5 VDSS @ TJmax 710 V RDS(on) max < 0.059 Ω ID 46 A c
■ Worldwide best RDS(on) * area amongst the usilicon based devices rod
■ Higher VDSS rating P
■ High dv/dt capability te
■ Excellent switching performance le
■ Easy to drive so
■ 100% avalanche tested ObApplication ) -Switching applications ct(sDescription duThe devices are N-channel MDmesh™ V Power roMOSFET based on an innovative proprietary Pvertical process technology, which is combined tewith STMicroelectronics’ well-known lePowerMESH™ horizontal layout structure. The resulting product has extremely .