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Ordering number:EN3716 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1511/2SD2285 30V/20A High-Current Switching Applications Applications · Relay drivers, high-speed inverters, converters. Features · Low collector-to-emitter saturation voltage : VCE(sat)=–0.5V (PNP), 0.4V (NPN) max. · Large cur.
· Low collector-to-emitter saturation voltage : VCE(sat)=
–0.5V (PNP), 0.4V (NPN) max.
· Large current capacity.
· Micaless package facilitating easy mounting.
Package Dimensions
unit:mm 2039A
[2SB1511/2SD2285]
( ) : 2SB1511
Specifications
E : Emitter C : Collector B : Base SANYO : TO-3PML
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation
Junction Temperature Storage Temperature
VCBO VCEO VEBO
IC ICP PC
Tj Tstg
.
| Distributor | Stock | Price | Buy |
|---|
| No. | Part # | Manufacture | Description | Datasheet |
|---|---|---|---|---|
| 1 | D2280 |
Sanyo |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 2 | D2281 |
Sanyo |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 3 | D2282 |
Sanyo |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 4 | D2282UK |
Seme LAB |
METAL GATE RF SILICON FET |
|
| 5 | D2284 |
Sanyo |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 6 | D2200 |
Sanyo |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 7 | D2200N |
Infineon |
Rectifier Diode |
|
| 8 | D2201 |
Sanyo |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 9 | D2201N |
Infineon |
Crow Bar Diode |
|
| 10 | D2201UK |
Seme LAB |
METAL GATE RF SILICON FET |
|
| 11 | D2202 |
Sanyo |
2SD2202 |
|
| 12 | D2202UK |
Seme LAB |
METAL GATE RF SILICON FET |
|
| 13 | D2203UK |
Seme LAB |
METAL GATE RF SILICON FET |
|
| 14 | D2204 |
Toshiba Semiconductor |
2SD2204 |
|
| 15 | D2204UK |
Seme LAB |
METAL GATE RF SILICON FET |
|
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