C2982 2SC2982

C2982 2SC2982

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2982 Storobo Flash Applications Medium Power Amplifier Applications 2SC2982 Unit: mm • High DC current gain and excellent linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 140 (typ.), (VCE = 1 V, IC = 2 A) .

Features

bstrate (250 mm2 × 0.8 t) JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (typ.) 1 2004-07-07 2SC2982 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Emitter-base breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance ICBO VCB = 30 V, IE = 0 IEBO VEB = 6 V, IC = 0 V (BR) CEO IC = 10 mA, IB = 0 V (BR) EBO IE = 1 mA, IC = 0 hFE (1) (Note 3) VCE = 1 V, IC .