C5097 2SC5097

C5097 2SC5097

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5097 2SC5097 VHF~UHF Band Low Noise Amplifier Applications Unit: mm · Low noise figure, high gain. · NF = 1.8dB, |S21e|2 = 10dB (f = 2 GHz) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitt.

Features

al Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Collector cut-off current Emitter cut-off current DC current gain Output capacitance Reverse transfer capacitance ICBO IEBO VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 hFE (Note 1) VCE = 6 V, IC = 7 mA Cob VCB = 10 V, IE = 0, f = 1 MHz (Note 2) Cre ¾ ¾ 50 ¾ ¾ Note 1: hFE classification R: 50~100, O: 80~160 Note 2: Cre is measured by 3 terminal method with capacitance bridge. Typ. ¾ ¾ Max 1 1 ¾ 160 0.5 0.35 0.9 0.85 Unit mA mA pF pF 1 2003-03-27 Marking 2SC5097 2 2003-03-27 2SC5097 3 2003-03-27 2SC5097 S-.