A1933 2SA1933

A1933 2SA1933

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1933 2SA1933 High-Current Switching Applications Industrial Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −2 A) • High-speed switching time: tstg = 1.0 μs (typ.) • Complementary to 2SC5175 .

Features

etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-09 Electrical Characteristics (Ta = 25°C) 2SA1933 Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacit.