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Ordering number:EN4783 NPN Triple Diffused Planar Silicon Transistor 2SC5045 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed (tf=100ns typ). · High reliability (Adoption of HVP process). · High breakdown voltage (VCBO=1600V). · Adoption of MBIT proc.
· High speed (tf=100ns typ).
· High reliability (Adoption of HVP process).
· High breakdown voltage (VCBO=1600V).
· Adoption of MBIT process.
Package Dimensions
unit:mm 2039D
[2SC5045]
16.0 3.4
5.6 3.1
5.0 8.0 22.0
2.0
21.0 4.0
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation
Symbol
VCBO VCEO VEBO
IC ICP PC
Junction Temperature Storage Temperature
Tj Tstg
Tc=25˚C
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter.
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