C3669 2SC3669

C3669 2SC3669

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3669 Power Amplifier Applications Power Switching Applications 2SC3669 Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching: tstg = 1.0 μs (typ.) • Complementary to 2SA1429 Absolute Ma.

Features

in the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-12-21 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol Test Cond.