IPD90N04S4-02 Power-Transistor

IPD90N04S4-02 Power-Transistor

OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPD90N04S4-02 Product Summary V DS R DS(on),max ID 40 V 2.4 mΩ 90 A PG-TO252-3-313 Type IPD9.

Features

• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested IPD90N04S4-02 Product Summary V DS R DS(on),max ID 40 V 2.4 mΩ 90 A PG-TO252-3-313 Type IPD90N04S4-02 Package Marking PG-TO252-3-313 4N0402 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) I D,pulse T C=25°C Avalanche energy, single pulse2) E AS I D=45A Avalanche current, single puls.