CM3400 N-Channel Enhancement Mode Power MOSFET

CM3400 N-Channel Enhancement Mode Power MOSFET

The NCE3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Application ●PWM applications ●Load switch ●Power management Product .

Features

ode Power MOSFET Electrical Characteristics (TA=25℃unless otherwise noted) Symbol Parameter Off Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Drain-to-Source Leakage Current Test Conditions VGS = 0V, ID=-250μA VDS=-24V,VGS=0V IGSS Gate-Body Leakage Current VGS=±12V,VDS=0V On Characteristics (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Trans conductance Dynamic Characteristics (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Tu.