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2SD2396(3DA2396) NPN /SILICON NPN TRANSISTOR : 。 Purpose: Low frequency power amplifier. :,,,,。 Features: High DC current gain),low VCE(sat),large collector power dissipation,wide SOA. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO 80 V VCEO 60 V VEBO 6.0 V IC 3.0 A ICP 6.
High DC current gain),low VCE(sat),large collector power dissipation,wide SOA. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO 80 V VCEO 60 V VEBO 6.0 V IC 3.0 A ICP 6.0 A PC(Ta=25℃) 2.0 W PC(Tc=25℃) 30 W Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol VCBO VCEO VEBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob Test condition IC=50μA IC=1.0mA IE=50μA VCB=80V IE=0 VEB=6.0V IC=0 VCE=4.0V IC=500mA IC=2.0A IB=0.05A IC=2.0A IB=0.05A VCE=5.0V IC=0.2A f=10MHz VCB=10V IE=0 f=1.0MHz Min 80 60 6.0 400 Rating Typ 1000 0.3 40 55 Max 10.
| Distributor | Stock | Price | Buy |
|---|
| No. | Part # | Manufacture | Description | Datasheet |
|---|---|---|---|---|
| 1 | 3DA2073A |
FOSHAN BLUE ROCKET |
SILICON NPN TRANSISTOR |
|
| 2 | 3DA2092 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 3 | 3DA2688 |
Foshan Eming Electronics |
SILICON NPN TRANSISTOR |
|
| 4 | 3DA27 |
Qunli |
NPN Transistor |
|
| 5 | 3DA27C |
INCHANGE |
NPN Transistor |
|
| 6 | 3DA1360 |
LZG |
SILICON PNP TRANSISTOR |
|
| 7 | 3DA1360A |
LZG |
SILICON PNP TRANSISTOR |
|
| 8 | 3DA1569 |
Huajing Microelectronics |
NPN Transistor |
|
| 9 | 3DA1573 |
LZG |
SILICON NPN TRANSISTOR |
|
| 10 | 3DA1573A |
LZG |
SILICON NPN TRANSISTOR |
|
| 11 | 3DA3807 |
Huajing Microelectronics |
NPN Transistor |
|
| 12 | 3DA3807 |
Foshan Eming Electronics |
SILICON NPN TRANSISTOR |
|
| 13 | 3DA4002 |
Huajing Microelectronics |
NPN Transistor |
|
| 14 | 3DA4014 |
Huajing Microelectronics |
NPN Transistor |
|
| 15 | 3DA4382 |
LZG |
SILICON NPN TRANSISTOR |
|
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