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ME4856 |
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| Part Number | ME4856 |
| Manufacturer | Matsuki |
| Description | The ME4856 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to min... |
| Features |
● RDS(ON)≦6mΩ@VGS=10V ● RDS(ON)≦8.5mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Battery Powered System ● DC/DC Converter ● Load Switch PIN CONFIGURATION (SOP-8) Top View Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current( TJ =150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current (Diode Conduction) Pulse Source-Drain Diode Current Maximum Power Dissipation ... |
| Document |
 ME4856 Data Sheet
PDF 664.76KB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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Matsuki |
N-Channel 30-V(D-S) MOSFET |
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Matsuki |
N-Channel 30-V(D-S) MOSFET |
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Matsuki |
N-Channel 30-V(D-S) MOSFET |
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Matsuki |
N-Channel 30-V(D-S) MOSFET |
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Matsuki |
N-Channel 30-V(D-S) MOSFET |
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Micro Electronics |
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Matsuki |
N-Channel 30-V(D-S) MOSFET |
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Matsuki |
N-Channel 30-V(D-S) MOSFET |
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