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MDP4N60 |
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| Part Number | MDP4N60 |
| Manufacturer | MagnaChip |
| Description | These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable de... |
| Features |
VDS = 600V ID = 4.6A RDS(ON) ≤ 2.0Ω
@ VGS = 10V @ VGS = 10V
Applications
Power Supply PFC High Current, High Speed Switching
D
TO-220 MDP Series
TO-220F MDF Series
G S
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage Gate-Source Voltage
Characteristics
Continuous Drain Current Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range * Id limited by maximum junction temperature
TC=25oC TC=100oC
TC=25oC Derate above 25 oC
Symbol VDSS VGSS
ID
IDM
P... |
| Document |
 MDP4N60 Data Sheet
PDF 1.20MB |
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