S AP4024 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PMPAK ® 5x6 package is sp.
Drain Current, VGS @ 10V3 Pulsed Drain Current1 Total Power Dissipation Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range 30 +20 60 26.1 20.9 160 36.7 5 -55 to 150 -55 to 150 V V A A A A W W ℃ ℃ Thermal Data Symbol Parameter Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 3.4 25 Unit ℃/W ℃/W 1 201410202 AP4024GEMT-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max..
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
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1 | AP4025 |
Antel Optronics |
(AP4010 - AP4100) High Performance IR Enhanced P-Type Silicon Photodiodes | |
2 | AP4028EH |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
3 | AP4028GEMT-HF |
Advanced Power Electronics |
N-Channel MOSFET | |
4 | AP400-B10 |
LEM |
AC Current transducer AP-B10 | |
5 | AP400-B420L |
LEM |
AC Current transducer AP-B420L |