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GT25G101

Toshiba Semiconductor
Part Number GT25G101
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel IGBT
Features GT25G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101 STROBE FLASH APPLICATIONS l High Inp...
Published Mar 23, 2005
Datasheet PDF File GT25G101 PDF File


GT25G101
GT25G101


Features
GT25G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101 STROBE FLASH APPLICATIONS l High Input Impedance l Low Saturation Voltage l Enhancement−Mode l 20V Gate Drive : VCE (sat)=8V (Max.) (IC=170A) Unit in mm MAXIMUM RATI...



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