AS4C4M4F1 |
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| Part Number | AS4C4M4F1 |
| Manufacturer | Alliance Semiconductor |
| Description | A0 to A11 Address inputs RAS Row address strobe CAS Column address strobe WE Write enable I/O0 to I/O3 Input/output OE Output enable VCC GND Power Ground Selection guide Maximum RAS access ... |
| Features |
• Organization: 4,194,304 words × 4 bits • High speed - 50/60 ns RAS access time - 25/30 ns column address access time - 12/15 ns CAS access time • Low power consumption - Active: 908 mW max - Standby: 5.5 mW max, CMOS I/O • Fast page mode • Refresh - 4096 refresh cycles, 64 ms refresh interval for AS4C4M4F0 - 2048 refresh cycles, 32 ms refresh interval for AS4C4M4F1 - RAS-only or CAS-before-RAS refresh or self-refresh • TTL-compatible, three-state I/O • JEDEC standard package - 300 mil, 24/26-pin SOJ - 300 mil, 24/26-pin TSOP • Latch-up current ≥ 200 mA • ESD protection ≥ 2000 mV • Industria... |
| Datasheet |
 AS4C4M4F1 Data Sheet
PDF 259.46KB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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Alliance Semiconductor |
5V 4M x 4 CMOS DRAM |
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Austin Semiconductor |
16M FPM DRAM |
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Alliance Semiconductor |
4M x 4 CMOS DRAM |
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Alliance Semiconductor |
4M x 4 CMOS DRAM |
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Alliance Semiconductor |
DDR |
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Alliance Semiconductor |
64Mb / 4M x 16 bit Synchronous DRAM |
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Alliance Semiconductor |
64M Synchronous DRAM |
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Alliance Semiconductor |
64M - (4M x 16 bit) Synchronous DRAM |
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Alliance Semiconductor |
64M - (4M x 16 bit) Synchronous DRAM |
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Alliance Semiconductor |
4M x 32 bit Synchronous DRAM |
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Austin Semiconductor |
64K x 4 DRAM |
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Austin Semiconductor |
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