AOC2413 8V P-Channel MOSFET

AOC2413 8V P-Channel MOSFET

The AOC2413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.2V while retaining a 5V VGS(MAX) rating. Product Summary VDS ID (at VGS=-2.5V) RDS(ON) (at VGS=-2.5V) RDS(ON) (at VGS=-1.8V) RDS(ON) (at VGS=-1.5V) RDS(ON) (at VGS=.

Features

minimum pad PCB Note 2. PW <300 µs pulses, duty cycle 0.5% max Typ 140 190 Max 170 230 D S Units V V A W °C Units °C/W °C/W Rev 0 : Dec. 2012 www.aosmd.com Page 1 of 5 AOC2413 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage ID=-250µA, VGS=0V VDS=-8V, VGS=0V VDS=0V, VGS=±5V VDS=VGS ID=-250µA.