AOC2411 Datasheet

AOC2411 30V P-Channel MOSFET

Product Summary The AOC2411 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. Vds ID (at VGS=-4.5V) RDS(ON) (at VGS=-4.5V) RDS(ON) (at VGS=-2.5V) -30V -3.4A < 45mΩ < 60mΩ WLCSP 1.6.

Features

imum pad PCB Note 2. PW <300 µs pulses, duty cycle 0.5% max Units V V A W °C Units °C/W °C/W °C/W Rev 1 : August 2012 www.aosmd.com Page 1 of 5 AOC2411 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Source-Source Breakdown Voltage IDSS Zero Gate Voltage Source Current IGSS VGS(th) Gate leakage current Gate Threshold Voltage RDS(ON) Static Source to Source On-Resistance gFS Forward Transconductance VFSD Diode Forward Voltage DYNAMIC PARAMETERS Note1 Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Cap.