WTBV56DMR POWER TRANSISTOR

WTBV56DMR POWER TRANSISTOR

Winsem Technology Corp. High Voltage NPN Transistor WTBV56DM (R) / WTI56D POWER TRANSISTOR TO-126 Pin Definition 1. Emitter 2. Collector 3. Base TO-126 R Pin Definition 1. Base 2. Collector 3. Emitter Features • High Voltage • Very High Switch Speed • BVCEO : 400V • BVCBO : 800V • IC : 4A • Sili.

Features

• High Voltage
• Very High Switch Speed
• BVCEO : 400V
• BVCBO : 800V
• IC : 4A
• Silicon Triple Diffused Type Application
• Electronic Ballasts
• Adapter
• Lighting ABSOLUTE MAXIMUM RATINGS ( Tc = 25℃ ) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Total Power Dissipation(TO126) Total Power Dissipation(TO251) Junction Temperature Operating Junction and Storage Temperature Range Symbol VCBO VCEO VEBO IC ICP PD TJ TSTG Version A12 Max Rating 800 400 9 4 8 20 35 150 -55 ~ +150 Unit V V V A A W ℃ ℃ Page 1 Wins.